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808nm Multimode Laser Diode 2W Output Power High Performance CE Certification

Hi-Tech Optoelectronics Co., Ltd
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808nm Multimode Laser Diode 2W Output Power High Performance CE Certification

Brand Name : HTOE

Model Number : HTOE-E-500-0808-TE-002W-1000

Place of Origin : Beijing, China

MOQ : 100 pcs

Price : Negotiable

Payment Terms : T/T

Supply Ability : 1000 pcs per month

Delivery Time : 15-30 working days

Packaging Details : Paper box

Output Power : 2 W

Center Wavelength : 808±5 nm

Emitter Width : 100/150 μm

Cavity Length : 1500/1000 μm

Width : 500 μm

Operating Current : ≤ 2.3 A

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2W Output Power 808nm Wavelength Unmounted Laser Diode Single Emitter

808nm Multimode Laser Diode 2W Output Power High Performance CE Certification

Semiconductor lasers are the centerpiece of most of today’s industrial laser systems. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.

HTOE has been focusing on the semiconductor wafer technology since 1998, delivers the multimode high power at wavelengths between 635 and 1064nm. HTOE-E-500-0808-TE-002W-1000 unmounted laser diode single emitter is an excellent choice for customers seeking state-of-art performance for laser development and customer applications. It outputs 2 watt (CW) power at 808nm center wavelength with narrow emitter width of 150 μm.

Features

  • High output power 2W at CW mode;
  • 808nm center wavelength;
  • Special Designed for cleaving into single emitters

Applications

  • OEM medical
  • Consumer medical
  • LiDAR
  • Military targeting
  • Range finding
  • Illumination

Parameters(25℃)

808nm Multimode Laser Diode 2W Output Power High Performance CE Certification

Parameter Unit

HTOE-E-500-0808-TE-002W-1000

Optical Parameter Output Power Po mW 2000
Center Wavelength λc nm 808 ± 5
Beam Divergence θ×θ deg 38x10
COD W ≥ 4.00
Geometrical Emitter Width μm 150
Width μm 500
Cavity Length μm 1000
Electrical Parameter Slope Efficiency Es W/A ≥ 1.15
Threshold Current Ith A ≤ 0.6
Operating Current If A ≤ 2.3
Operating Voltage Vf V ≤ 2

Notice

808nm Multimode Laser Diode 2W Output Power High Performance CE Certification

1. Item notice: HTOE-E-500(Width)-0808(center wavelength)-TE(polarization mode)-002W(output power)-1000(cavity length).

2. Data sheet is based on the result of testing under 25℃.

3. Data sheet is based on the C-Mount package testing.

4. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.


Product Tags:

semiconductor laser diode

      

multimode laser diode

      
Quality 808nm Multimode Laser Diode 2W Output Power High Performance CE Certification for sale

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